Semiconductor laser
文献类型：专利
| 作者 | FURUYA AKINORI; TANAKA HIDENAO |
| 发表日期 | 1992-04-15 |
| 专利号 | JP1992114486A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to operate at a high temperature and to output a high power by a method wherein a well layer of prescribed crystal is made to overlap a barrier layer of prescribed crystal to constitute a superlattice layer between an active layer and a P-type clad layer. CONSTITUTION:An N-type GaAs substrate 8 is provided, and an N-type clad layer 7 of In0.5(Ga1-xAlx)0.5P(x=0.7) 0.5mum in thickness, an activated layer 6 of In0.5Ga0.5P 0. 1mum in thickness, a multi-quantum well barrier layer 5 0.08mum in thickness, a P-type clad layer 4 of Ino0.5(Ga1-xAlx)0.5P(X=0. 7) 0.5mum in thickness, and a high concentration P-type GaAs cap layer 2 1mum in thickness are laminated in this order on the GaAs substrate 8 through an MOVPE device. A P-type electrode 1 is provided thereon coming into ohmic contact with the high concentration P-type GaAs cap layer 2. An N-type GaAs current constriction part 3 is provided through partial etching by an MOVPE device so as to constrict a current. Furthermore, an N-type electrode 9 is provided onto the underside of the N-type GaAs substrate 8. |
| 公开日期 | 1992-04-15 |
| 申请日期 | 1990-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83453]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | FURUYA AKINORI,TANAKA HIDENAO. Semiconductor laser. JP1992114486A. 1992-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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