Semiconductor laser element
文献类型：专利
| 作者 | KAYANE NAOKI; KONO TOSHIHIRO; KASHIWADA YASUTOSHI; KAJIMURA TAKASHI |
| 发表日期 | 1986-05-10 |
| 专利号 | JP1986091987A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To realize a semiconductor laser element in the structure, wherein the noise of return light is not generated and no antigmatism is caused, by a method wherein the refractive index difference between the central part and the outer edges of the striped light-emitting region is made larger in the vicinities of the light-outgoing end surfaces of the striped light-emitting region and the refractive index difference is made smaller in the central part of the light- emitting region. CONSTITUTION:An N type current constricting layer 4 is made to grow on a P type substrate 1, and after that, a groove 2 is formed. Then, a groove 2 wider and shallower than the groove 2 is formed in a part of the striped light-emitting region other than the vicinities of the light-outgoing end surfaces thereof. After that, a P type clad layer 5, an undoped active layer 6, an N type clad layer 7 and an N type cap layer 8 are made to grow in order and electrodes 9 and 10 are evaporated. |
| 公开日期 | 1986-05-10 |
| 申请日期 | 1984-10-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83454]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,KONO TOSHIHIRO,KASHIWADA YASUTOSHI,et al. Semiconductor laser element. JP1986091987A. 1986-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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