Semiconductor optical device and manufacturing method thereof
文献类型：专利
| 作者 | TAKADA, KAN; EKAWA, MITSURU; YAMAMOTO, TSUYOSHI; TAKEUCHI, TATSUYA |
| 发表日期 | 2010-09-28 |
| 专利号 | US7804870 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical device and manufacturing method thereof |
| 英文摘要 | In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 5×1018 cm−3 and the Fe concentration is 8×1017 cm−3. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0×1016 cm−3. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer. |
| 公开日期 | 2010-09-28 |
| 申请日期 | 2008-03-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83457]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | TAKADA, KAN,EKAWA, MITSURU,YAMAMOTO, TSUYOSHI,et al. Semiconductor optical device and manufacturing method thereof. US7804870. 2010-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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