Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | TSUBOTA TAKASHI |
| 发表日期 | 1990-08-20 |
| 专利号 | JP1990208991A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device of a DFB-LD type which oscillates in a single frequency by a method wherein current injection regions and current not injection regions are provided to an active region alternately in repetition at a specified period of refractive index change. CONSTITUTION:A current block layer 2 is formed on an element substrate 1 and grooves 6 are provided to the substrate 1 at a period of A (where A=mlambda/2ne: lambda = oscillation frequency, ne = equivalent refractive index of a grating waveguide, m = positive integer) in such a manner that every other groove reaches to the substrate A clad layer 7 is made to grow only in the grooves 6 using a groove forming pattern mask as a mask to form a current injection region, and the rest part of the layer 2 other than the grooves 6 is formed as a current non-injection region. And, an active layer 9 or a waveguide layer a is grown to remove the pattern mask and an effective waveguide grating is formed. By this constitution, a feedback takes place through gain coupling and a semiconductor laser device of this design can oscillate in a single wavelength. |
| 公开日期 | 1990-08-20 |
| 申请日期 | 1989-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83461]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSUBOTA TAKASHI. Semiconductor laser device and manufacture thereof. JP1990208991A. 1990-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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