Manufacture of semiconductor laser element
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; KAWAI YOSHIO; OGAWA HIROSHI; OSHIBA SAEKO |
| 发表日期 | 1988-10-18 |
| 专利号 | JP1988250886A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a high output from a semiconductor laser element at a low threshold current by forming a stripelike mask on a P-type InP substrate, and forming an N-type InP current construction layer and a P-type InP current construction layer at both sides of a mesa stripe formed by etching. CONSTITUTION:A stripelike SiO2 film 12 is formed on a P-type InP substrate 11, with the film as a mask the substrate 11 is etched to form a mesa type stripe, and an N-type InP current construction layer 13 and a P-type InP current construction layer 14 are grown at both sides. Thus, a stripelike groove is formed, the film 12 is removed, a clad layer 15, an active layer 16 and an opti cal guide layer 17 are grown by an LPE, a wavy grating 17a is formed thereon, and a clad layer 18 is grown by the LPE thereon. Thus, the layers 13, 14 become a PNP junction structure to improve its breakdown strength, the layers 13, 14 can be sufficiently increased in thicknesses, thereby operating at a high output. |
| 公开日期 | 1988-10-18 |
| 申请日期 | 1987-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83463]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,KAWAI YOSHIO,OGAWA HIROSHI,et al. Manufacture of semiconductor laser element. JP1988250886A. 1988-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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