Semiconductor laser device
文献类型：专利
| 作者 | OKADA MASATO |
| 发表日期 | 1990-03-22 |
| 专利号 | JP1990081492A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the surface of an upper clad layer from being oxidized, to enhance a crystal property of a recrystallized interface and to obtain a semiconductor laser device of high reliability by a method wherein the surface of the upper clad layer is coated with a protective layer. CONSTITUTION:In a first epitaxial growth process, a lower clad layer 2, an active layer 3, an upper clad layer 4, a protective layer 10 and a current- blocking layer 5 are formed on a substrate Then, a prescribed part of the current-blocking layer 5 is processed to be a stripe shape; a groove 6 for current passage use is formed. During this process, the surface of the upper clad layer 4 is covered with the protective layer 10. Then, a cap layer 7 and a contact layer 8 are formed in a second epitaxial growth process; after that, an n-side electrode 9b is formed on the side of the substrate 1 and a p-side electrode 9a is formed on the side of the contact layer 8; thereby, a semiconductor laser device is obtained. |
| 公开日期 | 1990-03-22 |
| 申请日期 | 1988-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OKADA MASATO. Semiconductor laser device. JP1990081492A. 1990-03-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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