Semiconductor laser
文献类型：专利
| 作者 | MORI YOSHIHIRO; MANNOU MASAYA; UENOYAMA TAKESHI |
| 发表日期 | 1987-05-18 |
| 专利号 | JP1987106686A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate convergence of a laser beam without using a lens by providing monolithic integration of concave mirrors in a DFB laser. CONSTITUTION:A grating 2 for distributed reflection is formed on an N-type InP substrate 1 and an N-type InGaAsP waveguide layer 2, a P-type InGaAsP active layer 3, a P-type InP cladding layer 4 and a P-type InGaAsP cap layer 5 are formed successively on the grating 2 to form a material wafer. A BH laser wafer is composed of this material wafer. Holes 6, which have partially circular cross sections and side walls vertical to the wafer surface, are formed in the wafer and, at the same time, electrodes 8 and 9 are provided on the top and bottom surfaces of the wafer to form a DFB laser. With this constitution, as a laser beam 10 emitted from the laser 15 is focused on one point, alignment can be achieved easily by providing the end surface 12 of an optical fiber 11 at that point. |
| 公开日期 | 1987-05-18 |
| 申请日期 | 1985-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83469]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MORI YOSHIHIRO,MANNOU MASAYA,UENOYAMA TAKESHI. Semiconductor laser. JP1987106686A. 1987-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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