Manufacture of semiconductor element
文献类型：专利
| 作者 | ISHIKURA TAKURO |
| 发表日期 | 1986-05-15 |
| 专利号 | JP1986096791A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To prevent a semiconductor element from deteriorating due to heating by preventing the second semiconductor layer from enhancing its resistance due to the reduction in the charge density at liquid phase growing time. CONSTITUTION:An N type GaAs current narrowing layer 2 is initially grown to the desired thickness on a P type GaAs substrate 1, a non-doped GaAs layer 11 is then grown to a desired thickness on the layer 2, melted solution is disconnected from the substrate to drop the temperature. The thickness of the layer 2 is necessary to be 0.3mum or larger for narrowing the current, and the thickness of the layer 11 is necessary to be 0.05mum or larger so as not to dissolve to the layer 2 in case of growing the next P type GaAlAs clad layer 4. Generally, since the depth of a V-shaped groove 3 is approx. 1mum, the thickness of the layer 2 is preferably set to 0.4-0.7mum, and the thickness of the layer 11 is set to 0.1-0.2mum. The later steps thereafter is the same as the steps of manufacturing a conventional GaAlAs semiconductor laser element. |
| 公开日期 | 1986-05-15 |
| 申请日期 | 1984-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | ISHIKURA TAKURO. Manufacture of semiconductor element. JP1986096791A. 1986-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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