-
文献类型：专利
| 作者 | KOBAYASHI KEISUKE; NAKAJIMA HISAO |
| 发表日期 | 1989-03-14 |
| 专利号 | JP1989014716B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce the oscillated threshold current density with less light loss by a method wherein one side surface of a quantum well type structure of alternate lamination of a plurality of direct transition type semiconductor ultrathin films and semiconductor ultrathin films is provided with a P type electrode, and its opposite side surface with an N type electrode. CONSTITUTION:A multilayer pitixial grown layer 3 of quantum well structure is formed by alternately laminating plurality of direct transition type semicondutor untlrathin films and semiconductor ultrathin films having a foribdden band width larger than that of a semiconductor on a buffer layer 2 in such a manner that quantum wells arrange spatially at intervals of the integral multiple of 1/2 of the oscillated light wavelength. The epitaxial grown layer 3 is partly removed by etching vertically to the surface of the substrate 1, and the vertical wall is provided with a P type region 4 produced by P type impurity diffusion, and further the P type electrode is provided. A V-shaped groove 5 is formed in the multilayer epitaxial layer 3, and the V-shaped inclined surface is provided with the N type electrode 7. |
| 公开日期 | 1989-03-14 |
| 申请日期 | 1984-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83484]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | KOBAYASHI KEISUKE,NAKAJIMA HISAO. -. JP1989014716B2. 1989-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。