Semiconductor laser and its manufacture
文献类型：专利
| 作者 | MIZUGUCHI KAZUO |
| 发表日期 | 1989-11-13 |
| 专利号 | JP1989281785A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To facilitate operation with a high efficiency by a method wherein a current is constricted against an active layer provided at the arbitrary position of a mesa by first - third current blocking layers and light emission and recombination are created in the active layer. CONSTITUTION:A resist layer 6 is removed and, while an insulating film 5 is kept, a p-type first current blocking layers 7 are built up by crystal growth. At that time, as the p-type current blocking layers 7 are formed on both the sides of a mesa, an n-type second current blocking layer 9 is not connected to an n-type upper cladding layer 4 and an n-type contact layer 11 regardless to the position of an active layer 3. Therefore, as the position of the active layer 3 is not restricted, the height of the mesa can be reduced and the base part of the mesa can be so formed as not to be broken easily, so that the width of the active layer 3 can be sufficiently narrowed. With this constitution, the laser can be operated with a high efficiency while a stable lateral mode oscillation is realized. |
| 公开日期 | 1989-11-13 |
| 申请日期 | 1988-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83485]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUGUCHI KAZUO. Semiconductor laser and its manufacture. JP1989281785A. 1989-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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