Integrated semiconductor laser device
文献类型：专利
| 作者 | IKEDA KENJI; IKUWA YOSHITO; MIHASHI YUTAKA; GOTO YUKIO |
| 发表日期 | 1987-05-13 |
| 专利号 | JP1987102579A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor laser device |
| 英文摘要 | PURPOSE:To readily couple between active regions by composing a block layer of an N-type AlzGa1-zAs. CONSTITUTION:When a positive voltage is applied to a P-type side electrode 9 and a negative voltage is applied to an N-type side electrode 8, a P-N junction of a region that an N-type AlzGa1-zAs current block layer 3 exists between the both electrodes and a P-type AlyGa1-yAs second clad layer 4 becomes reverse bias in the region. Accordingly, a current does not flow but the current flows only to a stripe groove 11, and a laser oscillation occurs in an active region 10 of this portion. Since a light seeped horizontally from the region 10 enters the adjacent active region, the light is coupled between the active regions to obtain a coherent high light output. |
| 公开日期 | 1987-05-13 |
| 申请日期 | 1985-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83486]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | IKEDA KENJI,IKUWA YOSHITO,MIHASHI YUTAKA,et al. Integrated semiconductor laser device. JP1987102579A. 1987-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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