Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | UEJIMA KENICHI; AIKI KUNIO |
| 发表日期 | 1988-05-12 |
| 专利号 | JP1988107183A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To enable a laser array to be manufactured with good reproducibility by providing dummy channels which do not become a semiconductor laser beam emitting section on both sides of the channels, thereby making uniform the thickness of each resonator and the characteristics of the laser beam emitted from each resonator. CONSTITUTION:On the principal surface of the substrate 2 of a semiconductor laser device 12, three channels 1 shaped in a reverse trapezoid is provided in parallel with each other, on both sides of which dummy channels 11 are provided. In the manufacture of the semiconductor laser device 12, a step easily develops in the parts of a lowermost clad 3 corresponding to the corners of each groove, but, since the distance between the respective grooves is several mum to several tens of mum, namely close to each other, a step develops only in the parts corresponding to the outer corners of dummy channels 8 and the surface of the clad layer 3 becomes a planar surface in the other channels 1 parts. As a result, the thickness of an active layer 4 corresponding to the three channels 1 parts dedicated to a laser array does not vary, becoming a homogeneous and uniform thickness. Therefore, the light emitting characteristics in each resonator 7 becomes uniform and stable. |
| 公开日期 | 1988-05-12 |
| 申请日期 | 1986-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83487]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UEJIMA KENICHI,AIKI KUNIO. Semiconductor laser device and manufacture thereof. JP1988107183A. 1988-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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