半導体レーザ装置
文献类型：专利
| 作者 | 新田 康一; 石川 正行; 岡島 正季; 板谷 和彦; 波多腰 玄一 |
| 发表日期 | 2001-01-05 |
| 专利号 | JP3144821B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To prevent light from being absorbed near a light-radiating part in an active layer by a method wherein a band gap at a light-radiating edge part in the active layer is made larger than that at a main light-emitting part in the active layer. CONSTITUTION:A buffer layer 11, clad layers 12, 14, 16, 20, an active layer 13, an etching-stop layer 15, a cap layer 17, a current-blocking layer 18, a guide layer 19, an intermediate gap layer 21 and a contact layer 22 are formed on an n-GaAs substrate 10. A stripe-shaped opening part 18a which reaches the etching-stop layer 15 is made in the clad layer 16, the cap layer 17 and the current-blocking layer 18. At the active layer 13, a part (a main light-emitting part) directly under the stripe-shaped opening part 18a in the current-blocking layer 18 is a low-energy-gap region 13a; a part (indicated by shaded lines) under other regions of the current-blocking layer 19 is a high-energy-gap region 13b. The individual layers mentioned above are formed of an InGaAlP-based semiconductor layer and the like. |
| 公开日期 | 2001-03-12 |
| 申请日期 | 1991-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83488]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 新田 康一,石川 正行,岡島 正季,等. 半導体レーザ装置. JP3144821B2. 2001-01-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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