Light-emitting semiconductor device
文献类型：专利
| 作者 | ONO YUUICHI; MORI MITSUHIRO; ITOU KAZUHIRO; KAWADA MASAHIKO; KURATA KAZUHIRO; NAKAMURA HITOSHI |
| 发表日期 | 1984-08-21 |
| 专利号 | JP1984145581A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting semiconductor device |
| 英文摘要 | PURPOSE:To obtain a semiconductor device, a radiant power output therefrom does not lower even on an acceleration and which is effective as a light source for an optical fiber or light-beam communication, by keeping difference of mixed crystal ratio between an active layer and a carrier implantation layer, the film thickness of the active layer, etc. respectively within specific ranges. CONSTITUTION:Difference of mixed crystal ratio between an active layer 24 and a carrier implantation layer 25 is brought to 0.1 or more, the film thickness of the active layer 24 to approximately 0.5-0.1mum, and the film thickness of a P type layer 23 interposing between the active layer 24 and a substrate 21 to approximately 10-20mum. For example, a P electrode 22 is formed on one surface of the thick P-Ga1-XAlXAs semiconductor substrate 21(X>=0.2) for transmitting beams and the P-Ga1-XAlXAS (Xapprox.=0.2) layer 23, the P or N-Ga1-XAlXAs (Xapprox.= 0.08) layer 24 as the active layer, the N-Ga1-XAlXAs (Xapprox.=0.2) layer 25 as the carrier injection layer, and an N-Ga1-XAlXAs (Xapprox.=0.01) layer 26 on the other surface through a liquid phase epitaxial method, and a CVD-SiO2 film 27 and an N electrode 28 are further formed, thus completing an element. |
| 公开日期 | 1984-08-21 |
| 申请日期 | 1984-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83489]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ONO YUUICHI,MORI MITSUHIRO,ITOU KAZUHIRO,et al. Light-emitting semiconductor device. JP1984145581A. 1984-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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