Semiconductor laser element
文献类型：专利
| 作者 | TAKIGUCHI, TOHRU; KURAMOTO, KYOSUKE |
| 发表日期 | 2003-09-09 |
| 专利号 | US6618411 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | A ridge waveguide semiconductor laser that is excellent in optical output characteristic and high-frequency characteristic is provided. A p-type InP cladding layer having a ridge shape is formed over a p-type AlInAs cladding layer via a p-type InP layer and a p-type GaInAsP etching stopper layer, thereby suppressing the increase in the series resistance due to discontinuous band structure between an etching stopper layer and the AlGaInAs cladding layer and reducing the threshold current of the laser. Also the InP cladding layer is formed in a ridge shape with the portion near the base thereof being splayed like a skirt, thereby keeping the p-type metal electrode from the light emitting region and suppressing the absorption loss of light due to the p-type metal electrode. Further, by increasing the resistance of the active layers in the region that interposes a main current path, parasitic capacitance formed by the active layer in the region where current does not flow can be decreased thereby improving the high-frequency characteristic of the laser. |
| 公开日期 | 2003-09-09 |
| 申请日期 | 2000-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83496]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKIGUCHI, TOHRU,KURAMOTO, KYOSUKE. Semiconductor laser element. US6618411. 2003-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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