Manufacture of semiconductor device
文献类型：专利
| 作者 | MOCHIZUKI KAZUHIRO; KUSANO CHUSHIRO; MASUDA HIROSHI; MITANI KATSUHIKO; TAKAHASHI SUSUMU |
| 发表日期 | 1991-04-23 |
| 专利号 | JP1991097230A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To achieve selective high resistivity of semiconductor material, which has been considered to be difficult, by implanting or diffusing ions of transition metal represented by Fe. CONSTITUTION:In the manufacturing of an InAlAs/InGaAs hetero junction bipolar transistor, the following In0.58Ga0.47As layers are epitaxially grown on a semiinsulative InP substrate 1; a highly doped N-type layer 2, an N-type doped layer 3, a highly doped P-type layer 4, an N-type doped layer 5, and a highly doped N-type layer 6. In a dielectric isolation region 7 of an element, Fe is ion-implanted so as to have a concentration distribution, thereby easily obtaining resistivity of the region 7, higher than or equal to 10OMEGAcm. The surfaces of the highly doped P-type layer 4 and the highly doped N-type layer 2 are exposed by photolithography and etching. After an SiO2 side wall film 11 is formed on a collector electrode forming region, a highly doped N-type layer 12 is buried by selective epitaxial growth, and a collector electrode 13, a base electrode 14, and an emitter electrode 15 are formed. |
| 公开日期 | 1991-04-23 |
| 申请日期 | 1989-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83500]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MOCHIZUKI KAZUHIRO,KUSANO CHUSHIRO,MASUDA HIROSHI,et al. Manufacture of semiconductor device. JP1991097230A. 1991-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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