Semiconductor laser and method of manufacturing same
文献类型：专利
| 作者 | OPSCHOOR, JAN |
| 发表日期 | 1992-04-22 |
| 专利号 | EP0266826B1 |
| 著作权人 | PHILIPS ELECTRONICS N.V. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method of manufacturing same |
| 英文摘要 | A semiconductor laser comprising a layer structure grown on a substrate region (1) having at least a first (2) and a second (3) passive layer of opposite conductivity types and an interposed active layer (4) as well as a current-limiting blocking layer (9), which forms a reverse-biased pn junction with the adjoining region and bounds the active region. According to the invention, the active region (4A) of the active layer (4) has a larger thickness than that of the remaining part of the active layer and it extends through the blocking layer (9) at least as far as the first passive layer (2), while the active layer (4) has the same conductivity type as the substrate region (1). |
| 公开日期 | 1992-04-22 |
| 申请日期 | 1987-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83504]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PHILIPS ELECTRONICS N.V. |
| 推荐引用方式 GB/T 7714 | OPSCHOOR, JAN. Semiconductor laser and method of manufacturing same. EP0266826B1. 1992-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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