Semiconductor laser and manufacture of the same
文献类型：专利
| 作者 | KIDOGUCHI ISAO; BAN YUZABURO; KAMIYAMA SATOSHI; ONAKA SEIJI |
| 发表日期 | 1992-04-17 |
| 专利号 | JP1992116994A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture of the same |
| 英文摘要 | PURPOSE:To suppress generation of heat in driving a laser and improve reliability by making a stripe-shaped groove in a current blocking layer and coating the groove and the upper portion of the current blocking layer with a third clad layer of a lower refractive index than that of the current blocking layer. CONSTITUTION:A stripe-shaped groove to inject carriers is made in an n-GaAs current blocking layer 7. Light emitted by injecting carriers into an undoped Ga0.5In0.5P active layer 4 is absorbed in the layer 7, therefore, an effective difference in refractive index is made between the active layer 4 under the groove and the active layer under the layer 7. Refractiveindex-waveguide-type single-transverse-mode laser oscillation is obtained by selecting the width of the groove. A p-Al0.7Ga0.3As clad layer 8 has low electric resistance and heat resistance, therefore, the series resistance between the p-side electrode and n-side electrode of a semiconductor laser is decreased and generation of heat in laser oscillation is suppressed. |
| 公开日期 | 1992-04-17 |
| 申请日期 | 1990-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83505]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIDOGUCHI ISAO,BAN YUZABURO,KAMIYAMA SATOSHI,et al. Semiconductor laser and manufacture of the same. JP1992116994A. 1992-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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