Semiconductor laser
文献类型：专利
| 作者 | ODA TATSUJI; MAMINE TAKAYOSHI; YONEYAMA OSAMU |
| 发表日期 | 1984-04-09 |
| 专利号 | JP1984061982A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To produce the titled laser with less spot strain, easy focusing and optical designating by a method wherein a refractivity guide units are provided on both sides of a light emitting region resultantly to provide a gain guide unit inside. CONSTITUTION:The proton implantation depth of a current limiting region 17 is selected to reach the second clad layer 14 but not to reach an active layer 13. Thus a stripe structure extending in one direction is formed to form a stripe-like light emitting region extending in one direction into the active layer 13 conforming to the so-called gain guide type structure. Then, for example a recession 18 is preliminarily formed on a substrate 11 at both sides of the stipe i.e. at both light leading-out sides of a light emitting region and a refractivity guide type structure can be formed so that a clad layer 12, an active layer 13 and another clad layer 14 may be successively formed in the recession 18 and bending parts may be located at both light leading-out sides of the light emitting region holding the region of the actige layer 13 making use of the recession 18 preliminarily formed. |
| 公开日期 | 1984-04-09 |
| 申请日期 | 1982-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83506]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | ODA TATSUJI,MAMINE TAKAYOSHI,YONEYAMA OSAMU. Semiconductor laser. JP1984061982A. 1984-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。