Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KADOWAKI TOMOKO |
| 发表日期 | 1990-02-15 |
| 专利号 | JP1990045986A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To carry out registration of a Zn diffusion region and a ridge in self alignment by making all the processes of ridge formation, burying growth and solid phase diffusion by using a mask of a double layer structure which is composed of a solid phase diffusion source in a lower layer and a burying growth mask in an upper layer. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4, and a cap layer 5 are formed successively on a substrate 1 through epitaxial growth. A striped solid phase diffusion source 6a consisting of ZnO:SiO2 and a burying growth mask 6b consisting of SiO2 or SiN, etc., are formed on the cap layer 5. Then the second clad layer 4 is etched to an area near the active layer 3 to form a ridge section through the cap layer 5 using two layers of the solid phase diffusion source 6a and the burying growth mask 6b as an etching mask. An area excepting a top of the ridge section is selectively buried in a current block layer 7. |
| 公开日期 | 1990-02-15 |
| 申请日期 | 1988-08-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83510]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KADOWAKI TOMOKO. Manufacture of semiconductor laser device. JP1990045986A. 1990-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。