半導体発光装置の製造方法
文献类型：专利
| 作者 | 大島 久純; 伊藤 俊樹 |
| 发表日期 | 1997-07-25 |
| 专利号 | JP2676761B2 |
| 著作权人 | 株式会社デンソー |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置の製造方法 |
| 英文摘要 | PURPOSE:To effectively perform the function of a semiconductor laser by forming P-type, N-type buried layers at an interval from the surface of a semiconductor substrate, and forming first and second electrodes on the surface. CONSTITUTION:A clad layer 22, an optically active layer 23 and further a clad layer 24 are sequentially laminated and formed by epitaxial growth on a substrate 2 Here, the refractive indices of the layers 22, 24 are smaller than the optical refractive index of the layer 23. P-type and N-type buried layers 25, 26 are formed at both sides of the layer 23. Electrodes 27, 28 are formed on the layers 25, 26. An insulating film 29 is so formed on the layer 24 as to electrically isolate the electrodes 27, 28. With the thus configuration, the function of a semiconductor laser can be effectively performed. |
| 公开日期 | 1997-11-17 |
| 申请日期 | 1988-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83516]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社デンソー |
| 推荐引用方式 GB/T 7714 | 大島 久純,伊藤 俊樹. 半導体発光装置の製造方法. JP2676761B2. 1997-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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