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文献类型：专利
| 作者 | YOSHIDA TOMOHIKO; TAKIGUCHI HARUHISA; KANEIWA SHINJI; KUDO HIROAKI; MATSUI KANEKI |
| 发表日期 | 1992-12-25 |
| 专利号 | JP1992082075B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent the reactive current from changing exceedingly due to the quantity of the injected current by restraining a gate current to the utmost by laminating p- and n-type buried layers on a semiconductor substrate around a projection and presetting the polarity of the p-n junction of the buried layers to be a reverse-applied bias polarity. CONSTITUTION:On a semiconductor substrate 1 of the first conductive type provided with a mesa stripe 9 of stripe form, the first buried layer 5 of the opposited conductive type to the first conductive type is grown in the part except the part on the mesa 9. After that, such element structure is formed that a stripe groove 10 whose width is narrower than that of the mesa is formed in a mesa stripe part and the first cladding layer 4 of the first conductive type, an active layer 3 of higher refractive index and smaller energy gap in comparison with said cladding layer, the second cladding layer of the opposite conductive type to the first conductive type are grown in order. When the first buried layer 5 is separated from the cladding layer 4, the energizing of the thyristor for preventing current formed of the cladding layer 4, the second buried layer 6, the first buried layer 5, and the substrate 1 can be prevented. |
| 公开日期 | 1992-12-25 |
| 申请日期 | 1985-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83521]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YOSHIDA TOMOHIKO,TAKIGUCHI HARUHISA,KANEIWA SHINJI,et al. -. JP1992082075B2. 1992-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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