Semiconductor device
文献类型：专利
| 作者 | NAKAO ICHIROU; SHIBATA ATSUSHI; KIMURA SOUICHI |
| 发表日期 | 1985-07-01 |
| 专利号 | JP1985123083A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To improve light-receiving efficiency in a light-receiving section by forming the light-receiving section having the composition of a band gap the same as or smaller than the band gap of a semiconductor laser active layer. CONSTITUTION:Each layer of an n type InP clad layer 22, an un-doped InGaAsP active layer 23, a p type InP clad layer 24 and a p type InGaAsP cap layer 25 is grown on an n type InP substrate 21 in an epitaxial manner. Each layer is inverted-mesa etched, and each layer of a p type InP buried first layer 26, an n type InP buried second layer 27 and a p type InGaAsP buried third layer 28 is grown in the epitaxial manner. The band gap of the active layer 23 is made previously larger than that of the buried third layer 28 at that time. One part of the buried third layer 28 is removed through etching, and the buried second layer 27 is exposed. The buried third layer 28 between a semiconductor laser section 41 and a light-receiving element section 42 is etched selectively, insulating films 30 are sheped, and laser electrodes 31, 33 and light-receiving element electrodes 31, 32 are formed. |
| 公开日期 | 1985-07-01 |
| 申请日期 | 1983-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83522]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | NAKAO ICHIROU,SHIBATA ATSUSHI,KIMURA SOUICHI. Semiconductor device. JP1985123083A. 1985-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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