Semiconductor laser device
文献类型：专利
| 作者 | SASAKI YOUICHI; OONAKA SEIJI; SERIZAWA AKIMOTO |
| 发表日期 | 1985-11-02 |
| 专利号 | JP1985219786A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To construct two laser parts in a laser element by a method wherein a semi-insulation region is provided in the second clad layer in the direction orthogonal to the laser resonator axis, and a groove is formed in this region. CONSTITUTION:The first clad layer 2, an active layer 3, the second clad layer 4, and resonator surfaces 5 and 5' are formed on a substrate The groove 6' is dug in the layer 4 down closely to the layer 3 after formation of the semi-insulation region 13 in the layer 4. The region 13 is formed by proton irradiation or by burying a semi-insulating material. Electrodes 10 and 11 are electrically insulated from each other by forming the region 13, and current can be passed independently. |
| 公开日期 | 1985-11-02 |
| 申请日期 | 1984-04-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83528]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | SASAKI YOUICHI,OONAKA SEIJI,SERIZAWA AKIMOTO. Semiconductor laser device. JP1985219786A. 1985-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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