Semiconductor laser device
文献类型：专利
| 作者 | YOSHIDA NAOTO |
| 发表日期 | 1990-11-28 |
| 专利号 | JP1990288285A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable currents to flow concentratadly only in the active layer below a ridge part and to enable the light to be efficiently shut in the active layer of a ridge part by making the active layer excluding a ridge part and the region near to the active layer of the first clad layer of the conductivity type opposite to the conductivity type of the first clad layer. CONSTITUTION:An n-(AlyGa1-y)0.5In0.5P first clad layer 2, an intrinsic (AlxGa1-x)0.5 In0.5P active layer 3, a p-(AlzGa1-z)0.5In0.5P second clad layer 4, a p-InGap buffer layer 5, and a p-GaAs contact layer 6' are grown in this order, and next an SiN film 11 is formed on the contact layer 6'. Next, the SiN film 11 is etched partially so as to form a stripe-shaped mask 11', and next those are etched selectively down to the midway of the second layer 4 so as to form a ridge part 20, and then this is heated in the furnace of a MOCVD device, whereby Zn is diffused down to the midway of the first clad 2 so as to form a p-type diffusion area 8. Successively, n-GaAs is grown selectively on both sides of the ridge part 20 so as to form an n-GaAs current blocking layer 7, and after removal of the mask 11' of the SiN film, p-GaAs is grown on the whole face so as to form a contact layer 6. |
| 公开日期 | 1990-11-28 |
| 申请日期 | 1989-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83531]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA NAOTO. Semiconductor laser device. JP1990288285A. 1990-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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