Semiconductor laser
文献类型：专利
| 作者 | IGUCHI SHINICHI |
| 发表日期 | 1986-08-29 |
| 专利号 | JP1986194889A |
| 著作权人 | 住友電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To produce simply and reproducibly BH laser with excellent performance by a method wherein an active region formed at mesa-striped shape is coated by a semiconductor thin layer and periphery thereof is buried by a heat-resistant resin. CONSTITUTION:An active region 11 formed at mesa-striped shape is coated by a semiconductor thin layer 12, additionally periphery thereof is buried by a heat-resistant resin 13. Refractive index of the semiconductor thin layer 12 and the heat-resistant resin 13 are selected to be smaller than that of a laser active layer 16. Thereby, laser light is enclosed effectively to inside the laser active layer 16 the same as normal BH laser. The electric current flowing to the laser is restricted only inside the active region 11 owing to insulation of the heat-resistant resin 13. |
| 公开日期 | 1986-08-29 |
| 申请日期 | 1985-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83534]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 住友電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | IGUCHI SHINICHI. Semiconductor laser. JP1986194889A. 1986-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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