Semiconductor laser
文献类型：专利
| 作者 | HIRATA SHOJI; NARUI HIRONOBU; MORI YOSHIFUMI |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225882A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a threshold current and improve the saturation of an optical output-current characteristic by preventing a leakage current from being produced by providing a sub-mesa protrusion in the vicinity of a mesa protrusion substantially parallely to the same. CONSTITUTION:A current blocking layer 26 is formed as a substantially flat 100 plane over the entire region thereof by providing a sub-mesa protrusion 32 in the vicinity of a mesa protrusion 22 substantially parallely to the same. Accordingly, occurrence of a transition area is effectively avoided. Hereby, occurrence of a leakage current is securely restricted without impurity concentration of the current blocking layer 26 being much increased and without the thickness of the current blocking layer 26 being sufficiently made large, and further operation of a p-n-p-n thyristor formed on opposite sides of a striped epitaxial growth layer 30 as an operation region is avoided. Thus, a threshold current Ith is reduced and saturation of an optical output-current characteristic is improved. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83536]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | HIRATA SHOJI,NARUI HIRONOBU,MORI YOSHIFUMI. Semiconductor laser. JP1991225882A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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