Manufacture of semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; MATSUI YASUHIRO; WADA HIROSHI |
| 发表日期 | 1991-01-18 |
| 专利号 | JP1991011688A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To simplify a process by a method wherein a p-type clad layer, an active layer, an n-type clad layer and an n-type cap layer which have been formed on a p-type substrate are etched and a compound semiconductor is grown on both sides of a remaining stripe part in order to form a semiinsulating layer as a current-blocking layer. CONSTITUTION:A p-type clad layer 22, an active layer 23, an n-type clad layer 24 and an n-type cap layer 25 are formed one after another on a p-type substrate 21; these formed layers are etched to be a stripe shape; after that, a semiinsulating layer 28 as a current-blocking layer is formed on both sides of the remaining stripe part. When the semiinsulating layer 28 is formed of a compound semiconductor containing a semiinsulating dopant, the compound semiconductor is doped simultaneously with an n-type dopant. Thereby, it is easy to form an ohmic contact, to omit a process and to reduce an element capacity. |
| 公开日期 | 1991-01-18 |
| 申请日期 | 1989-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83542]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,MATSUI YASUHIRO,WADA HIROSHI. Manufacture of semiconductor laser. JP1991011688A. 1991-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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