Semiconductor laser device
文献类型：专利
| 作者 | YOSHIHARA KAZUHIRO |
| 发表日期 | 1989-09-19 |
| 专利号 | JP1989233786A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To facilitate independent detection of the respective light outputs of a plurality of light emitting points of a semiconductor laser with low crosstalk by a method wherein light beams emitted from the semiconductor laser propagate through respective different waveguides and are detected by respective different photodetectors provided in the waveguides. CONSTITUTION:A semiconductor laser 1 which has a plurality of light emitting points 1a, 1b and 1c is welded on a heatsink 3 and a substrate 2 which has a plurality of trenches immediately behind the end surface of the laser 1 is also provided on the heatsink 3. A waveguide 5 is composed of a tunnel formed with protrusions on both the sides of the trench of the substrate 2 and the heatsink 3. Photodetectors 4 are provided in the waveguides 5 by welding on the substrate 2 surface. If the end surface of the laser 1 and the incident surface of the substrate 2 are arranged close to each other, penetration of the light from the other light emitting point can be suppressed. With this constitution, the individual light outputs can be independently detected with low crosstalk. |
| 公开日期 | 1989-09-19 |
| 申请日期 | 1988-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83544]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | YOSHIHARA KAZUHIRO. Semiconductor laser device. JP1989233786A. 1989-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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