Semiconductor light emitting device
文献类型：专利
| 作者 | TANAKA, AKIRA; HONGO, CHIE; HARADA, YOSHIYUKI; SUGAWARA, HIDETO; ONOMURA, MASAAKI; KATSUNO, HIROSHI |
| 发表日期 | 2007-04-19 |
| 专利号 | US20070086496A1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type. The first and second barrier layers and the well layer contain indium. At least one of the first barrier layer and the second barrier layer has a thickness of 30 nm or more. |
| 公开日期 | 2007-04-19 |
| 申请日期 | 2006-02-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83546]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | TANAKA, AKIRA,HONGO, CHIE,HARADA, YOSHIYUKI,et al. Semiconductor light emitting device. US20070086496A1. 2007-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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