中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor light emitting device

文献类型:专利

作者SATO SHIRO
发表日期1988-08-04
专利号JP1988188983A
著作权人RICOH CO LTD
国家日本
文献子类发明申请
其他题名Semiconductor light emitting device
英文摘要PURPOSE:To confine effectively emitted lights and obtain a semiconductor light emitting element as well as a semiconductor laser which have an improved light emitting power level by preparing a protruding part that rises vertically on a substrate, thereby forming electrodes on the side plane of the protruding part and on a plane that is extending in parallel with the substrate from a lower part of the protruding part. CONSTITUTION:Almost a cylindrical protruding part 121 is formed in the vertical direction to a substrate at an upper clad layer 104 consisting of the second conductivity type semiconductor layer and an upper reflecting mirror 111 that plays arole of the reflecting mirror to a light moving up and down inside an element is formed at the top of the protruding part. An electrically insulating layer 110 is laminated at a plane that is substantially in parallel with the substrate 101 from a lower part of the protruding part 121 and a P-side electrode 106 is formed at an upper part of the electrically insulating layer 110 as well as at the side pane of the protruding part 121 and then an N-side electrode 107 is formed at the rear of the substrate 10 When this device causes an electric current to flow between the above two electrodes, a light emitting at an emitting layer is confined in the horizontal direction to the substrate and it improves the emitting efficiency. In this way, a light power generated at a light emitting region is taken out as an improved light emitting power in the vertical direction to the substrate.
公开日期1988-08-04
申请日期1987-01-31
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/83549]  
专题半导体激光器专利数据库
作者单位RICOH CO LTD
推荐引用方式
GB/T 7714
SATO SHIRO. Semiconductor light emitting device. JP1988188983A. 1988-08-04.

入库方式: OAI收割

来源:西安光学精密机械研究所

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