Semiconductor light emitting device
文献类型:专利
作者 | SATO SHIRO |
发表日期 | 1988-08-04 |
专利号 | JP1988188983A |
著作权人 | RICOH CO LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor light emitting device |
英文摘要 | PURPOSE:To confine effectively emitted lights and obtain a semiconductor light emitting element as well as a semiconductor laser which have an improved light emitting power level by preparing a protruding part that rises vertically on a substrate, thereby forming electrodes on the side plane of the protruding part and on a plane that is extending in parallel with the substrate from a lower part of the protruding part. CONSTITUTION:Almost a cylindrical protruding part 121 is formed in the vertical direction to a substrate at an upper clad layer 104 consisting of the second conductivity type semiconductor layer and an upper reflecting mirror 111 that plays arole of the reflecting mirror to a light moving up and down inside an element is formed at the top of the protruding part. An electrically insulating layer 110 is laminated at a plane that is substantially in parallel with the substrate 101 from a lower part of the protruding part 121 and a P-side electrode 106 is formed at an upper part of the electrically insulating layer 110 as well as at the side pane of the protruding part 121 and then an N-side electrode 107 is formed at the rear of the substrate 10 When this device causes an electric current to flow between the above two electrodes, a light emitting at an emitting layer is confined in the horizontal direction to the substrate and it improves the emitting efficiency. In this way, a light power generated at a light emitting region is taken out as an improved light emitting power in the vertical direction to the substrate. |
公开日期 | 1988-08-04 |
申请日期 | 1987-01-31 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/83549] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | RICOH CO LTD |
推荐引用方式 GB/T 7714 | SATO SHIRO. Semiconductor light emitting device. JP1988188983A. 1988-08-04. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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