中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser element

文献类型:专利

作者FUKUNAGA, TOSHIAKI; MATSUMOTO, KENJI; WADA, MITSUGU
发表日期2001-10-11
专利号US20010028668A1
著作权人NICHIA CORPORATION
国家美国
文献子类发明申请
其他题名Semiconductor laser element
英文摘要A semiconductor laser element capable of reducing an element resistance and producing a beam of high quality includes: an n-Ga1-Z4AlZ4N composition gradient layer provided between an n-GaN contact layer and an n-Ga1-Z1AlZ1N/GaN superlattice clad layer; an n-Ga1-Z5AlZ5N composition gradient layer provided between the n-Ga1-Z1AlZ1N/GaN superlattice clad layer and an nor i-Ga1-Z2AlZ2N optical waveguide layer; a p-Ga1-Z5AlZ5N composition gradient layer provided between a p- or i-Ga1-Z2AlZ2N optical waveguide layer and a p-Ga1-Z1AlZ1N superlattice gradient layer; and a p-Ga1-Z4AlZ4N composition gradient layer provided between a p-Ga1-Z1AlZ1N/GaN superlattice upper clad layer and a p-GaN contact layer. Z4 of the n-Ga1-Z4AlZ4N composition gradient layer is continuously changed from 0 to a composition corresponding to the band gap of the Ga1-Z1AlZ1N/GaN superlattice clad layer. Z5 in the Ga1-Z5AlZ5N composition gradient layer is continuously changed from z2 to a composition corresponding to the band gap of the Ga1-Z1AlZ1N/GaN superlattice clad layer.
公开日期2001-10-11
申请日期2001-04-10
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/83552]  
专题半导体激光器专利数据库
作者单位NICHIA CORPORATION
推荐引用方式
GB/T 7714
FUKUNAGA, TOSHIAKI,MATSUMOTO, KENJI,WADA, MITSUGU. Semiconductor laser element. US20010028668A1. 2001-10-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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