Semiconductor laser element
文献类型：专利
| 作者 | FUKUNAGA, TOSHIAKI; MATSUMOTO, KENJI; WADA, MITSUGU |
| 发表日期 | 2001-10-11 |
| 专利号 | US20010028668A1 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | A semiconductor laser element capable of reducing an element resistance and producing a beam of high quality includes: an n-Ga1-Z4AlZ4N composition gradient layer provided between an n-GaN contact layer and an n-Ga1-Z1AlZ1N/GaN superlattice clad layer; an n-Ga1-Z5AlZ5N composition gradient layer provided between the n-Ga1-Z1AlZ1N/GaN superlattice clad layer and an nor i-Ga1-Z2AlZ2N optical waveguide layer; a p-Ga1-Z5AlZ5N composition gradient layer provided between a p- or i-Ga1-Z2AlZ2N optical waveguide layer and a p-Ga1-Z1AlZ1N superlattice gradient layer; and a p-Ga1-Z4AlZ4N composition gradient layer provided between a p-Ga1-Z1AlZ1N/GaN superlattice upper clad layer and a p-GaN contact layer. Z4 of the n-Ga1-Z4AlZ4N composition gradient layer is continuously changed from 0 to a composition corresponding to the band gap of the Ga1-Z1AlZ1N/GaN superlattice clad layer. Z5 in the Ga1-Z5AlZ5N composition gradient layer is continuously changed from z2 to a composition corresponding to the band gap of the Ga1-Z1AlZ1N/GaN superlattice clad layer. |
| 公开日期 | 2001-10-11 |
| 申请日期 | 2001-04-10 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83552]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | FUKUNAGA, TOSHIAKI,MATSUMOTO, KENJI,WADA, MITSUGU. Semiconductor laser element. US20010028668A1. 2001-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。