Semiconductor laser device
文献类型：专利
| 作者 | KAYANE NAOKI; SAITOU KAZUTOSHI; ITOU RIYOUICHI; SHIGE NORIYUKI |
| 发表日期 | 1983-10-15 |
| 专利号 | JP1983175887A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To bring the temperature characteristics of the threshold current of laser oscillation to an extremely stable state as well as to increase the maximum light output of the titled laser device by a method wherein a semiconductor layer, which will be turned to a photo waveguide layer to be positioned adjoining to an active layer, is introduced. CONSTITUTION:An n-Ga1-xAlxAs (0.2<=0.6) layer 1, an n-Ga1-yAlyAs (0.1<=0.5) layer 2, a Ga1-wAlwAs (0<=0.3) layer 3, and a p-Ga1-vAlvAs (0.2<=0.6) layer 4 are formed on a GaAs substrate 10. A semiconductor layer 6 is a buried Ga1-uAluAs (0.1<=0.6) layer. The refractive indexes n1 and n3 of the active layer 3 and the first clad layer 1 are set in such a manner that the difference between them will be 0.18-0.22 or thereabout to cope with the practical use of th device. For the purpose of having an effective confinement of carrier in the active layer 3, the difference of the forbidden band width of the active layer 3 and the photo waveguide layer 2 is set at 0.15eV or above, thereby enabling to determine the maximum value of the refractive index n2 of the photo waveguide layer 2. |
| 公开日期 | 1983-10-15 |
| 申请日期 | 1983-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83562]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,SAITOU KAZUTOSHI,ITOU RIYOUICHI,et al. Semiconductor laser device. JP1983175887A. 1983-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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