Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; TAKAGI TOSHIKIMI; OOTSUKA NAOTAKA |
| 发表日期 | 1982-10-01 |
| 专利号 | JP1982159082A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To improve the life characteristic of the subject semiconductor laser element by a method wherein a P type clad layer or a photo guiding layer, an active layer, a buffer layer whereon no Se is doped, and an Se-doped N type clad layer are successively grown on a substrate. CONSTITUTION:A V-shape groove 27 is formed on the current control layer 22 which was grown on a P type GaAs substrate 21, and a Zn doped P type clad layer 23, a Ge-doped P type active layer 24, an Si-doped N type buffer layer 30, an Se-doped N type lad layer 25, and an Se-doped N type cap layer 26 are successively grown by lamination on the groove 27. As a result, the deterioration caused by the defect generating on the active layer and the Se-doped N type clad layer interface is suppressed, and the life of the subject laser element can be extended. |
| 公开日期 | 1982-10-01 |
| 申请日期 | 1981-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83563]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,TAKAGI TOSHIKIMI,OOTSUKA NAOTAKA. Semiconductor laser element. JP1982159082A. 1982-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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