Semiconductor optical device and method of manufacturing the same
文献类型：专利
| 作者 | OGASAWARA, MATSUYUKI; KONDO, SUSUMU; IGA, RYUZO; KONDO, YASUHIRO |
| 发表日期 | 2003-03-06 |
| 专利号 | US20030042495A1 |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical device and method of manufacturing the same |
| 英文摘要 | A semiconductor optical device includes, on a semiconductor substrate, a mesa-stripe-like multilayer structure constituted by at least an n-cladding layer, an active region formed from an active layer or a photoabsorption layer, and a p-cladding layer, and a buried layer in which two sides of the multilayer structured are buried using a semi-insulating semiconductor crystal. The buried layer includes a diffusion enhancement layer which is adjacent to the mesa-stripe-like multilayer structure and enhances diffusion of a p-impurity, and a diffusion suppression layer which is adjacent to the diffusion enhancement layer and suppresses diffusion of a p-impurity. A method of manufacturing a semiconductor optical device is also disclosed. |
| 公开日期 | 2003-03-06 |
| 申请日期 | 2002-08-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83568]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 推荐引用方式 GB/T 7714 | OGASAWARA, MATSUYUKI,KONDO, SUSUMU,IGA, RYUZO,et al. Semiconductor optical device and method of manufacturing the same. US20030042495A1. 2003-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。