Semiconductor light emitting element
文献类型：专利
| 作者 | SAKAI KAZUO; NISHIMURA KOUSUKE |
| 发表日期 | 1991-03-27 |
| 专利号 | JP1991071679A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To enable an active layer to confine enough injected carriers and to be improved in light emitting efficiency as satisfying a lattice matching condition with respect to a substrate by a method wherein a first barrier layer, which is thinner and smaller than the active layer in electron affinity, is arranged at the interface of a heterojunction between the active layer and a clad layer. CONSTITUTION:A first barrier layer 5 formed of semiconductor, whose electron affinity Ea is smaller than that of an active layer 4 and is smaller than the layer 4 in thickness, is provided to an interface of the heterojunction between the active layer 4 and a clad layer 6. Therefore, lattice constants of a substrate 1, clad layers 2 and 6, the active layer 4, and the first barrier layer 5 are roughly matched with each other, and as the first barrier layer 5 is thin, the probability that holes subsist in it becomes small. Therefore, electrons injected into the active layers 4 can be restrained from overflowing to the P-side clad layer 6, so that electrons can be confined into the active layer 4. By this setup, a device high in efficiency and operable in the wavelength region of blue light can be obtained. |
| 公开日期 | 1991-03-27 |
| 申请日期 | 1989-08-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83570]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | SAKAI KAZUO,NISHIMURA KOUSUKE. Semiconductor light emitting element. JP1991071679A. 1991-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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