Semiconductor laser device
文献类型：专利
| 作者 | MORI MASATAKA; YAGI TETSUYA |
| 发表日期 | 1990-02-27 |
| 专利号 | JP1990058286A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device whose threshold current and operating current are small by forming a diffusion region by selectively diffusing impurity into an AlGaAs lower clad laver of first conductivity type, an AlGaAs active layer of first conductivity type, and an AlGaAs upper clad layer of second conductivity type. CONSTITUTION:On a GaAs substrate 1 of first conductivity type, a GaAs block layer 2 of second conductivity type, and a GaAs layer 7 of first conductivity type are epitaxially grown in succession; the GaAs layer 7 of first conductivity type is doped with impurity of first conductivity type, and then a V-shaped trench is formed by etching. After that, the following are epitaxially grown; an AlGaAs lower clad layer 3 of first conductivity type, an AlGaAs active layer 4 of first conductivity type, an AlGaAs upper clad layer 5 of second conductivity type, and an AlGaAs contact layer 6 of second conductivity type. At this time, the first conductivity type impurity, with which the above GaAs layer 7 is doped, is diffused into a part of the respective AlGaAs lower clad layer 3, AlGaAs active layer 4 and AlGaAs upper clad layer 5, thereby selectively forming a diffusion region 8 of first conductivity type. |
| 公开日期 | 1990-02-27 |
| 申请日期 | 1988-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83571]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MORI MASATAKA,YAGI TETSUYA. Semiconductor laser device. JP1990058286A. 1990-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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