半導体光素子
文献类型：专利
| 作者 | 西村 三千代; 新田 淳 |
| 发表日期 | 2000-03-10 |
| 专利号 | JP3043797B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体光素子 |
| 英文摘要 | PURPOSE:To increase the degree of freedoms of a design of an optical element having a light emission and a light reception by forming first and second regions to be formed to become an active layer or a light absorption layer in the same waveguide, and providing means for independently controlling the first and second regions. CONSTITUTION:Since electric connections are conducted in a passage of a p-type electrode 22, a p-type clad layer 18, an active layer 18, a first n-type clad layer 19 and an n-type electrode 24 in a light emitting unit, if a forward bias is applied between the electrodes 22 and 24, a current flows in this passage, carrier is injected to an active layer 14, a population inversion takes place, and an inductive emission occurs. On the other hand, in a light receptor, electric connections are conducted in a passage of the electrode 22, the layer 18, a light absorption layer 16, a second n-type clad layer 21, and an n-type electrode 23. Accordingly, if a reverse bias is applied between the electrodes 22 and 23, a light is detected in the layer 16. |
| 公开日期 | 2000-05-22 |
| 申请日期 | 1990-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 西村 三千代,新田 淳. 半導体光素子. JP3043797B2. 2000-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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