Blue-green laser diode
文献类型:专利
作者 | HAASE, MICHAEL A.; DEPUYDT, JAMES M.; CHENG, HWA; QIU, JUN |
发表日期 | 1996-04-30 |
专利号 | US5513199 |
著作权人 | MINNESOTA MINING AND MANUFACTURING COMPANY |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Blue-green laser diode |
英文摘要 | A II-VI compound semiconductor laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers forming the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A CdZnSe or other II-VI semiconductor quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. |
公开日期 | 1996-04-30 |
申请日期 | 1995-03-08 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/83579] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MINNESOTA MINING AND MANUFACTURING COMPANY |
推荐引用方式 GB/T 7714 | HAASE, MICHAEL A.,DEPUYDT, JAMES M.,CHENG, HWA,et al. Blue-green laser diode. US5513199. 1996-04-30. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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