Manufacture of semiconductor device
文献类型：专利
| 作者 | MITSUYU TSUNEO; OKAWA KAZUHIRO; YAMAZAKI OSAMU |
| 发表日期 | 1988-09-21 |
| 专利号 | JP1988227027A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To manufacture II-VI compound semiconductor exhibiting p-type conductivity type by irradiating a substrate surface during the formation of a thin film with nitrogen molecular ions (N2) in a molecular beam epitaxy method. CONSTITUTION:Nitrogen molecular ions are directed onto a substrate while compound semiconductor made of at least one type of element of mercury, cadmium and zinc, and at least one type of element of sulfur, selenium and tellurium is deposited on the substrate in vacuum. Here, gallium arsenide single crystal is used as the substrate, and zinc selenide is deposited thereon. The reactivity of nitrogen of impurity is enhanced, with the result that the impurity is effectively added without redeposition. Thus, II-VI compound semiconductor crystal to which the nitrogen is effectively added as an acceptor impurity can be obtained, and p-type conductivity type is attained, thereby obtaining a high efficiency p-m junction light emitting element. |
| 公开日期 | 1988-09-21 |
| 申请日期 | 1987-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83581]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MITSUYU TSUNEO,OKAWA KAZUHIRO,YAMAZAKI OSAMU. Manufacture of semiconductor device. JP1988227027A. 1988-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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