Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | NOGUCHI ETSUO; KONDOU SUSUMU; SUZUKI YOSHIO; NAGAI HARUO |
| 发表日期 | 1985-06-21 |
| 专利号 | JP1985115284A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To enable the width of an active layer to be controlled easily, by reducing the height of a mesa structure in a hetero-junction including the active layer. CONSTITUTION:An N type InP substrate 1 is provided thereon with an N type InP crystal layer 2 as a lower clad layer, a GaInAsP quaternary mixed crystal layer 3 as an active layer and a P type InP crystal layer 4 as an upper clad layer, and this layered structure is subjected to mesa etching. A semi-insulating InP crystal layer 6 whose resistance is increased by doping Ni, Co or Fe is caused to grow, and then a P type region 8 is obtained by thermal diffusion of Zn or Cd or by ion implantation of Be or the like. Since formation of the mesa structure is substantially limited to the upper clad layer 4 and active layer 3, the required depth to be etched is very small while the width of the active layer can be controlled with precision. |
| 公开日期 | 1985-06-21 |
| 申请日期 | 1983-11-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83587]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,KONDOU SUSUMU,SUZUKI YOSHIO,et al. Semiconductor laser and manufacture thereof. JP1985115284A. 1985-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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