面発光レーザ装置
文献类型：专利
| 作者 | 伊賀 健一; 茨木 晃; 古沢 浩太郎; 石川 徹 |
| 发表日期 | 1999-07-16 |
| 专利号 | JP2952299B2 |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光レーザ装置 |
| 英文摘要 | PURPOSE:To restrain a reactive current from flowing into a block layer so as to hold down optical loss which is induced halfway in an optical path by a method wherein a layer which is larger than an active layer in AlGaAs composition ratio and specified in thickness is included in a semiconductor multilayered film. CONSTITUTION:A first semiconductor multilayered film 2, an interposed layer 3, a second semiconductor multilayered film 4, a clad layer 5, an active layer 6, a clad layer 7, and a cap layer 8 are laminated on a substrate 1, a resist layer is formed on the center of the cap layer 8, an etching process is carried out using the resist layer as a mask as far as the surface of the multilayered film 2 to form a mesa. Using the resist layer as a mask, a first block layer 9 and a second block layer 10 are formed through a selective LPE burying growth method, and a P-type GaAs layer 11 is made to grow. Then, the masking layer is removed through etching, and then a flattening layer 12 and a contact layer 14 are laminated through a second LPE growth method. Lastly, the contact layer 14 is removed through etching, an SiO2 layer and a TiO2 layer are alternately laminated four times to construct a dielectric multilayered plate 13. The interposed layer 3 is set larger than the active layer 6 in AlAs composition ratio and as thick as lambda/2n, where lambda denotes oscillation wavelength and n is integral multiples of the refractive index of the layer 3. |
| 公开日期 | 1999-09-20 |
| 申请日期 | 1990-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | 伊賀 健一,茨木 晃,古沢 浩太郎,等. 面発光レーザ装置. JP2952299B2. 1999-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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