Optical semiconductor device and method of manufacturing optical semiconductor device
文献类型：专利
| 作者 | TAKEUCHI, TATSUYA; HASEGAWA, TARO |
| 发表日期 | 2014-08-05 |
| 专利号 | US8798110 |
| 著作权人 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device and method of manufacturing optical semiconductor device |
| 英文摘要 | A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer. |
| 公开日期 | 2014-08-05 |
| 申请日期 | 2011-04-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83590]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 推荐引用方式 GB/T 7714 | TAKEUCHI, TATSUYA,HASEGAWA, TARO. Optical semiconductor device and method of manufacturing optical semiconductor device. US8798110. 2014-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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