Manufacture of semiconductor laser
文献类型：专利
| 作者 | ARIMOTO SATOSHI |
| 发表日期 | 1992-10-27 |
| 专利号 | JP1992303987A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve the regrown interface characteristic of a contact layer without generating a thermally deformed layer by removing the part of a semiconductor layer corresponding to the crest section of a ridge by selective etching after the semiconductor layer is grown by epitaxial growth and forming a current block layer. CONSTITUTION:A double hetero-structure is composed of a lower clad layer 2 of the first conductivity type, active layer 3, and upper clad layer of the second conductivity type. Then only the layer 4 is worked to a ridge-like shape by leaving the layer 4 by a prescribed thickness only. After forming the ridge 9b, a semiconductor layer 7b of the first conductivity type which becomes a current block is formed so as to cover the entire surface of the ridge 9b. Then the current block layer 7b is formed by only removing the layer 7b from the crest section of the ridge which becomes a current path by selective etching. Since the current block layer 7b is formed without performing selective growth using a dielectric film, no thermally deformed layer is formed and the regrown interface characteristic of a contact layer 8 is improved when the layer 8 is regrown. |
| 公开日期 | 1992-10-27 |
| 申请日期 | 1991-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83592]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ARIMOTO SATOSHI. Manufacture of semiconductor laser. JP1992303987A. 1992-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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