半導体レーザ
文献类型：专利
| 作者 | 遠藤 健司 |
| 发表日期 | 1997-07-04 |
| 专利号 | JP2669139B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To realize improvement of reliability and long operation life through suppression of diffusion of P-type impurity into an active layer by providing a wider lattice constant of an active layer than that of the other semiconductor layer. CONSTITUTION:A P-type clad layer 2, GaInP distorted active layer 11, P-type clad layer 4, P-type GaInP layer 5 and P-type GaAs cap layer 6 are sequentially formed on a substrate Moreover, an N-type GaAs current block layer 7 for current squeezing and a P-type GaAs layer 8 for ohmic electrode formation are also provided and electrodes 9, 10 are also formed to an electrode forming layer 8 and the substrate. The distorted GaInP active layer 11 is formed with less Ga composition and more In composition than the combination of the compositions matching the lattice constant with GaAs and has the lattice constant longer than that of GaAs by several factors of 10 percent. Any of the other semiconductor layers has the lattice constant almost matching with that of GaAs. The distorted GaInP active layer 11 receives a compressive stress from the peripheral semiconductor layer, has a narrow lattice constant and suppresses diffusion of P-type impurity to active layer. |
| 公开日期 | 1997-10-27 |
| 申请日期 | 1990-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83593]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 遠藤 健司. 半導体レーザ. JP2669139B2. 1997-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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