半導体レーザ
文献类型：专利
| 作者 | 池田 外充 |
| 发表日期 | 1997-10-03 |
| 专利号 | JP2703997B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To control oscillation wavelength easily without greatly changing injected current density by determining the oscillation wavelength using a loss region and a gain region, and applying bias current using an adjustment region independent of the control of the wavelength. CONSTITUTION:A buffer layer 2, a clad layer 3, an active layer 4, a clad layer 5, and a cap layer 6 are laminated on a substrate 1, and an electrode 7, on the p-side, and an electrode 8, on the n-side, are deposited. The p-side electrode 7 is separated into three in the resonant direction, and those correspond to a gain region II, a low region I, and an adjustment region III. And the end face loss of a resonator is set so that the light corresponding to the great quantizing energy oscillates when injection is done in the same current density for these regions and that the light corresponding to small quantizing energy oscillates when injection is done in the current density being different according to the regions. Hereby, the oscillation wavelength can be controlled easily without greatly changing the injected current density. |
| 公开日期 | 1998-01-26 |
| 申请日期 | 1989-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83594]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 池田 外充. 半導体レーザ. JP2703997B2. 1997-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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