Semiconductor device
文献类型：专利
| 作者 | NAJDA, STEPHEN PETER |
| 发表日期 | 2002-11-26 |
| 专利号 | US6486491 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device |
| 英文摘要 | An (Al,Ga,In)P semiconductor laser device has an optical region disposed between n-type and p-type cladding layers. An active region containing quantum well active layers and barrier layers disposed alternately with the quantum well layers is provided within the optical guiding region. Strained layers of InxGal-xP are used as the barrier layers. The active region is thus aluminium-free, and this reduces the oxygen impurity concentration in the active region thereby improving the performance and reliability of the laser. An aluminium-free spacer layer can be provided between one of the cladding layers and the quantum well active layer disposed closest to that cladding layer. The invention may be applied to other semiconductor devices, for example such as an LED. |
| 公开日期 | 2002-11-26 |
| 申请日期 | 2000-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83602]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NAJDA, STEPHEN PETER. Semiconductor device. US6486491. 2002-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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