Distributed reflection semiconductor laser element
文献类型：专利
| 作者 | OGAWA HIROSHI; WADA HIROSHI; KAWAHARA MASATO; KOBAYASHI MASAO |
| 发表日期 | 1988-10-24 |
| 专利号 | JP1988255986A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser element |
| 英文摘要 | PURPOSE:To contrive the improvement of the coupling efficiency of an active region and optical waveguide layers by a method wherein the impurity-doped regions of an active layer are used as the optical waveguide layers, the impurity- undoped region of the active layer is used as the active region and these optical waveguide layers and the active region are formed of the same quantum well layer (active layer). CONSTITUTION:An active layer 26 has an active region 32 and optical waveguide layers 34, the layers 34 are used as disordered regions that a multi- quantum well (MQW) structure is disordered by doping part of the layer 26 with an impurity and the residual part of the layer 26 is used as the region 32. The disordering of the MQW structure, which is executed by doping an impurity, is executed in such a way that an absorption of the layers 34 to the oscillation wavelength of light to be emitted from the region 26 is eliminated (nearly zero) or is lessened. Thereby, the coupling efficiency of the region 32 and the layers 34 is improved and a nearly complete coupling of the region 32 and these layers 34 can be obtained. |
| 公开日期 | 1988-10-24 |
| 申请日期 | 1987-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83609]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OGAWA HIROSHI,WADA HIROSHI,KAWAHARA MASATO,et al. Distributed reflection semiconductor laser element. JP1988255986A. 1988-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。