半導体レーザ素子
文献类型：专利
| 作者 | 船水 将久; 江口 和弘 |
| 发表日期 | 1997-11-07 |
| 专利号 | JP2716717B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element having a low element resistance and a large light output, by using a GaInAsP composition transition layer and a GaInAs layer for an ohmic contact layer of the semiconductor laser element. CONSTITUTION:On an N-type InP substrate 101, there is provided a double hetero junction wherein an about 1mum thick N-type InP clad and buffer layer 102, an about 0.1mum thick Ga0.4In0.6As0.9P0.1 active layer 103, an about 1mum thick P-type InP clad layer 104, an about 0.1mum thick P-type GaInAs composition transition layer 105 and about 0.4mum thick Ga0.47In0.53As layer 106 are deposited in that order. The structure is etched by using an SiO2 stripe film having a width of about 5mum as a mask until a part of the N-type InP clad layer is etched off, whereby an active region is formed. Then using the SiO2 stripe film as a mask, a P-type InP layer 107 and an N-type InP layer 108 are formed to bury the active region. Finally, the SiO2 film is removed and a new SiO2 film 109 is formed on the surface except the active region. A metal is vapor deposited to provide an N ohmic contact 11 |
| 公开日期 | 1998-02-18 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83611]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 船水 将久,江口 和弘. 半導体レーザ素子. JP2716717B2. 1997-11-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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