Semiconductor laser device
文献类型：专利
| 作者 | KADOWAKI, TOMOKO; MURAKAMI, TAKASHI |
| 发表日期 | 1992-09-08 |
| 专利号 | US5146467 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device producing visible light includes a double heterojunction structure having a first conductivity type lower cladding layer, an active layer and a second conductivity type upper cladding layer, formed in a first epitaxial growth process of AlGaInP series materials and a contact layer formed in a second or later epitaxial growth process. The contact layer is InxGA1-xAsyP1-y which can be grown at a lower temperature than used in the first process. Therefore, deterioration in laser characteristics due to the diffusion of dopant impurities during the growth of contact layer can be prevented, resulting in a semiconductor laser device having high performance and long lifetime. |
| 公开日期 | 1992-09-08 |
| 申请日期 | 1991-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KADOWAKI, TOMOKO,MURAKAMI, TAKASHI. Semiconductor laser device. US5146467. 1992-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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